Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Silicon DRIE (Bosch Process)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 750 µm
0 .. 750 µm
Aspect ratio 20
Etch type dry anisotropic
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 70, silicon dioxide: 150, silicon: 1
Sides processed either
Temperature 25 °C
Equipment