Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Undoped polysilicon LPCVD
  1 RCA1 clean
  2 HF dip
  3 Undoped polysilicon LPCVD
Allowed materialssilicon, silicon nitride, polysilicon, silicon dioxideResidual stress-400 .. -200 MPaUniformity0.025
Deposition rate60 Å/minTemperature565 °C
  4 Spectrophotometric film thickness measurement
Process characteristics:
Thickness
Thickness*
must be 0.5 .. 3 µm
0.5 .. 3 µm
Material polysilicon
Wafer size
Wafer size