Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Low Stress silicon nitride LPCVD (<300 MPa)
  1 RCA1 clean
  2 HF dip
  3 Low Stress silicon nitride LPCVD (300 MPa)
Allowed materialssilicon, silicon nitride, polysilicon, silicon dioxideRefractive index2.2Temperature810 °C
Deposition rate31 Å/minResidual stress200 .. 300 MPaUniformity0.05
  4 Spectrophotometric film thickness measurement
Process characteristics:
Thickness
Thickness*
must be 0.05 .. 1 µm
0.05 .. 1 µm
Material silicon nitride
Wafer size
Wafer size