Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Atomic Layer Deposition (ALD)
Process characteristics:
Material
Material*
Temperature
Temperature*
must be 100 .. 400 °C
100 .. 400 °C
Thickness
Thickness of film to be deposited.
Thickness*
Thickness of film to be deposited., must be 1 .. 300 nm
1 .. 300 nm
Batch size 1
Microstructure amorphous
Sides processed either
Wafer size
Wafer size
Equipment Savannah 200
Equipment characteristics:
Piece thickness
Range of wafer piece thickness the equipment can accept
 100 .. 2000 µm
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 2000 µm