Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  HF Vapor Phase Etch
Process characteristics:
Time for Clear
Typical Etch Rate 67nm/min
Time for Clear
Typical Etch Rate 67nm/min
unconstrained
Time for Undercut
Typical Lateral Etch Rate 267 nm/min
Time for Undercut
Typical Lateral Etch Rate 267 nm/min
unconstrained
Setup time 20 min
Wafer size
Wafer size
Equipment Primaxx HF Vapor etcher
Equipment characteristics:
Batch sizes 100 mm: 3, 150 mm: 3
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 800 µm
Comments:
  • Wafers with metals may not be allowed in this tool.