Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Indium Tin Oxide (ITO) deposition
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 1 µm
0 .. 1 µm
Batch size 1
Material indium tin oxide
Sides processed either
Wafer size
Wafer size
Equipment Sputter tool
  • 125mm, 156mm pseudosquare substrates are ok.
    300mm square substrates are ok as well.
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer thickness
List or range of wafer thicknesses the tool can accept
 150 .. 1000 µm
Comments:
  • Composition:
    90 wt% In2O3 10 wt% SnO2
Attachments
[Thumbnail]ITO_resistance.png (28.3 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2010-08-06 10:38
ITO electrical sheet resistance
[Thumbnail]ITO_transmittence.png (42.2 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2010-08-06 10:38
ITO optical transmittance