Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Niobium Titanium Oxide (NTO) deposition
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 0.1 µm
0 .. 0.1 µm
Batch size 1
Material NTO
Sides processed either
Wafer size
Wafer size
Equipment Sputter tool
  • 125mm, 156mm pseudosquare substrates are ok.
    300mm square substrates are ok as well.
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer thickness
List or range of wafer thicknesses the tool can accept
 150 .. 1000 µm
Comments:
  • Composition:
    95 wt% TiO2 5 wt% Nb2O5
  • The sheet resistance of the as-deposited NTO films is extremely high, ~500 kOhms/sq for a 70 nm film. Deposition rates for NTO are very low. We are currently not offering NTO films thicker than 100 nm.
Attachments
[Thumbnail]NTO_transmittence.png (31.2 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2010-08-06 11:36
NTO optical transmittance