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| Process characteristics: |
| Depth Etch Depth |
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| Material |
gallium nitride |
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| Temperature |
20 .. 380 °C |
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| Wafer size |
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| Equipment |
Oxford Plasmalab 100 |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 150 mm: 1, 75 mm: 1 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon carbide, silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
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